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роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2

verfasst von
A. Glamazda, A. Sharafeev, R. Bohle, P. Lemmens, K. Y. Choi, F. C. Chou, R. Sankar
Abstract

The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

Externe Organisation(en)
B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine
Technische Universität Braunschweig
Sungkyunkwan University
Academia Sinica
Typ
Artikel
Journal
Fizika Nizkikh Temperatur
Band
47
Seiten
994-1002
Anzahl der Seiten
9
ISSN
0132-6414
Publikationsdatum
11.2021
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Physik und Astronomie (insg.)