3D GaN nanoarchitecture for field-effect transistors

verfasst von: Muhammad Fahlesa Fatahilah, Klaas Strempel, Feng Yu, Sindhuri Vodapally, Andreas Waag, Hutomo Suryo Wasisto
Abstract: The three-dimensionality of 3D GaN field-effect transistors (FETs) provides them with unique advantages compared to their planar counterparts, introducing a promising path towards future FETs beyond Moore's law. Similar to today's Si processor technology, 3D GaN FETs offer multi-gate structures that provide excellent electrostatic control over the channel and enable very low subthreshold swing values close to the theoretical limit. Various concepts have been demonstrated, including both lateral and vertical devices with GaN nanowire (NW) or nanofin (NF) geometries. Outstanding transport properties were achieved with laterally contacted NWs that were grown in a bottom-up approach and transferred onto an insulating substrate. For higher power application, vertical FETs based on regular arrays of GaN nanostructures are particularly promising due to their parallel integration capability and large sidewall surfaces, which can be utilized as channel area. In this paper, we review the current status of 3D GaN FETs and discuss their concepts, fabrication techniques, and performances. In addition to the potential benefits, reliability issues and difficulties that may arise in complex 3D processing are discussed, which need to be tackled to pave the way for future switching applications.
Externe Organisation(en): Technische Universität Braunschweig
Typ: Artikel
Journal: Micro and Nano Engineering
Band: 3
Seiten: 59-81
Anzahl der Seiten: 23
Publikationsdatum: 05.2019
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Elektronische, optische und magnetische Materialien, Atom- und Molekularphysik sowie Optik, Physik der kondensierten Materie, Oberflächen, Beschichtungen und Folien, Elektrotechnik und Elektronik
Elektronische Version(en): https://doi.org/10.1016/j.mne.2019.04.001 (Zugang: Offen)

BibTeX

@article{c4106479818a454bb04ae4d76859845c,
title = "3D GaN nanoarchitecture for field-effect transistors",
abstract = "The three-dimensionality of 3D GaN field-effect transistors (FETs) provides them with unique advantages compared to their planar counterparts, introducing a promising path towards future FETs beyond Moore's law. Similar to today's Si processor technology, 3D GaN FETs offer multi-gate structures that provide excellent electrostatic control over the channel and enable very low subthreshold swing values close to the theoretical limit. Various concepts have been demonstrated, including both lateral and vertical devices with GaN nanowire (NW) or nanofin (NF) geometries. Outstanding transport properties were achieved with laterally contacted NWs that were grown in a bottom-up approach and transferred onto an insulating substrate. For higher power application, vertical FETs based on regular arrays of GaN nanostructures are particularly promising due to their parallel integration capability and large sidewall surfaces, which can be utilized as channel area. In this paper, we review the current status of 3D GaN FETs and discuss their concepts, fabrication techniques, and performances. In addition to the potential benefits, reliability issues and difficulties that may arise in complex 3D processing are discussed, which need to be tackled to pave the way for future switching applications.",
keywords = "3D architecture, Field-effect transistor (FET), GaN, Lateral transistor, Nanoelectronics, Nanofin, Nanowire, Vertical transistor",
author = "Fatahilah, {Muhammad Fahlesa} and Klaas Strempel and Feng Yu and Sindhuri Vodapally and Andreas Waag and Wasisto, {Hutomo Suryo}",
note = "Funding information: This work has been performed within the projects of {\textquoteleft}LENA-OptoSense{\textquoteright} funded by the Lower Saxony Ministry for Science and Culture (MWK) Landesmittel des Nieders{\"a}chsischen Vorab and {\textquoteleft}3D Concepts for Gallium-Nitride Electronics (3D GaN){\textquoteright} funded by the German Research Foundation (DFG). The authors thank Friedhard R{\"o}mer and Bernd Witzigmann from the University of Kassel, Germany for simulation of the GaN nanowire devices and constructive discussion on the topic of 3D GaN electronics. We also acknowledge the support from the Indonesian-German Center for Nano and Quantum Technologies (IG-Nano) and the Ministry of Research, Technology and Higher Education of the Republic of Indonesia (RISTEKDIKTI) .",
year = "2019",
month = may,
doi = "10.1016/j.mne.2019.04.001",
language = "English",
volume = "3",
pages = "59--81",
journal = "Micro and Nano Engineering",
issn = "2590-0072",
publisher = "Elsevier BV",
}