Time-Resolved Cathodoluminescence Spectroscopy of Oxygen-Related Defects in AlN Layers

verfasst von: Barbara Szafranski, Lukas Peters, Christoph Margenfeld, Stefan Wolter, Andreas Waag, Tobias Voss
Abstract: High-temperature annealing significantly improves the crystal quality of sputter-deposited AlN templates, but at the same time introduces a high concentration of oxygen-related point defects. The origin of this oxygen-related defect luminescence is studied using time-resolved and temperature-dependent cathodoluminescence spectroscopy. Characterization of the defect luminescence reveals a complex multiexponential decay, with a fast component of about 2 ns and slow components of tens to hundreds of nanoseconds. The slow decay is attributed to a donor–acceptor-pair transition between an O_N donor and mainly the (V_Al-O_N)²⁻ and (V_Al-2O_N)¹⁻ defect complexes as acceptors, whereas the fast component is ascribed to a free electron to acceptor transition involving the same type of acceptors. Furthermore, the impact of these oxygen-related defects on the quality and transparency of the AlN templates is discussed.
Externe Organisation(en): Technische Universität Braunschweig
Typ: Artikel
Journal: Physica Status Solidi (B): Basic Research
Band: 262
ISSN: 0370-1972
Publikationsdatum: 02.10.2025
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie
Elektronische Version(en): https://doi.org/10.1002/pssb.202500148 (Zugang: Offen)

BibTeX

@article{3e2c2e9ee5f5455c95bc345778347d6d,
title = "Time-Resolved Cathodoluminescence Spectroscopy of Oxygen-Related Defects in AlN Layers",
abstract = "High-temperature annealing significantly improves the crystal quality of sputter-deposited AlN templates, but at the same time introduces a high concentration of oxygen-related point defects. The origin of this oxygen-related defect luminescence is studied using time-resolved and temperature-dependent cathodoluminescence spectroscopy. Characterization of the defect luminescence reveals a complex multiexponential decay, with a fast component of about 2 ns and slow components of tens to hundreds of nanoseconds. The slow decay is attributed to a donor–acceptor-pair transition between an ON donor and mainly the (VAl-ON)2− and (VAl-2ON)1− defect complexes as acceptors, whereas the fast component is ascribed to a free electron to acceptor transition involving the same type of acceptors. Furthermore, the impact of these oxygen-related defects on the quality and transparency of the AlN templates is discussed.",
keywords = "AlN, cathodoluminescence, high-temperature annealing",
author = "Barbara Szafranski and Lukas Peters and Christoph Margenfeld and Stefan Wolter and Andreas Waag and Tobias Voss",
note = "Publisher Copyright: {\textcopyright} 2025 The Author(s). physica status solidi (b) basic solid state physics published by Wiley-VCH GmbH.",
year = "2025",
month = oct,
day = "2",
doi = "10.1002/pssb.202500148",
language = "English",
volume = "262",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "John Wiley and Sons Inc.",
number = "10",
}