Directly addressable GaN-based nano-LED arrays

fabrication and electro-optical characterization

authored by: Daria D. Bezshlyakh, Hendrik Spende, Thomas Weimann, Peter Hinze, Steffen Bornemann, Jan Gülink, Joan Canals, Joan Daniel Prades, Angel Dieguez, Andreas Waag
Abstract: The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.
External Organisation(s): Technische Universität Braunschweig
National Metrology Institute of Germany (PTB)
Universitat de Barcelona
Type: Article
Journal: Microsystems and Nanoengineering
Volume: 6
Publication date: 01.12.2020
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Atomic and Molecular Physics, and Optics, Materials Science (miscellaneous), Condensed Matter Physics, Industrial and Manufacturing Engineering, Electrical and Electronic Engineering
Electronic version(s): https://doi.org/10.1038/s41378-020-00198-y (Access: Open)

BibTeX

@article{3ff46dc0927145bf841da5892048bb93,
title = "Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization",
abstract = "The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.",
author = "Bezshlyakh, {Daria D.} and Hendrik Spende and Thomas Weimann and Peter Hinze and Steffen Bornemann and Jan G{\"u}link and Joan Canals and Prades, {Joan Daniel} and Angel Dieguez and Andreas Waag",
note = "Funding information: This work was funded by the European Union{\textquoteright}s Horizon 2020 research and innovation program within the project of ChipScope under grant agreement no. 737089 and by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany{\textquoteright}s Excellence Strategy—EXC-2123 QuantumFrontiers —390837967. The authors would like to thank C. Margenfeld and I. Manglano Clavero for sample growth in the epitaxy competence center (ec2) and A. Schmidt, J. Breitfelder, and A. Michalski for their technical support during the experiments. The authors gratefully acknowledge the support of the Braunschweig International Graduate School of Metrology B-IGSM and the DFG Research Training Group 1952 Metrology for Complex Nanosystems. J.D.P. acknowledges the support of the ICREA Academia Program, and the DFG Project GrKNanoMet.",
year = "2020",
month = dec,
day = "1",
doi = "10.1038/s41378-020-00198-y",
language = "English",
volume = "6",
journal = "Microsystems and Nanoengineering",
issn = "2055-7434",
publisher = "Nature Publishing Group",
number = "1",
}