Thickness-dependent gap energies in thin layers of Hf Te5

authored by

C. Belke, S. Locmelis, L. Thole, H. Schmidt, P. Behrens, R. J. Haug

Abstract

Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.

Organisation(s)

Institute of Solid State Physics
Institute of Inorganic Chemistry
Laboratory of Nano and Quantum Engineering
QuantumFrontiers

Type

Article

Journal

2D Materials

Volume

8

ISSN

2053-1583

Publication date

07.2021

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Chemistry(all), Materials Science(all), Condensed Matter Physics, Mechanics of Materials, Mechanical Engineering

Electronic version(s)

https://doi.org/10.1088/2053-1583/abf98b (Access: Open)