Nanoporous gallium nitride as novel material for integrated photonics

authored by: Stefanie Kroker, Jyoti Bej, Matthias Hoormann, Frederik Lüßmann, Florian Meierhofer, Karla Paz, Carsten Ronning, Anastasiia Sorokina, Andreas Waag
Abstract: The gallium nitride material family offers an attractive platform to extend the application range of integrated photonics down to wavelengths in the blue and ultraviolet spectral range. Simultaneously, it allows the integration of light sources such as LEDs and lasers with waveguides and meta-optics to gain complete control over all dimensions of light. To this end, not only is control over the dimensional properties of nanophotonic structures necessary, but flexibility in the refractive index of involved materials is also highly beneficial. Nanoporous gallium nitride fabricated and structured by ion implantation and electrochemical etching can provide this versatility. In this contribution, we report on nanoporous gallium nitride as a novel material in integrated photonics and discuss devices and technological boundary conditions.
External Organisation(s): Technische Universität Braunschweig
Laboratory for Emerging Nanometrology Braunschweig (LENA)
Physikalisch-Technische Bundesanstalt PTB
Friedrich Schiller University Jena
Type: Conference contribution
Publication date: 19.03.2025
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Computer Science Applications, Applied Mathematics, Electrical and Electronic Engineering
Electronic version(s): https://doi.org/10.1117/12.3041769 (Access: Unknown)

BibTeX

@inproceedings{4d91c501f2364b3e91c4387cf2c56305,
title = "Nanoporous gallium nitride as novel material for integrated photonics",
abstract = "The gallium nitride material family offers an attractive platform to extend the application range of integrated photonics down to wavelengths in the blue and ultraviolet spectral range. Simultaneously, it allows the integration of light sources such as LEDs and lasers with waveguides and meta-optics to gain complete control over all dimensions of light. To this end, not only is control over the dimensional properties of nanophotonic structures necessary, but flexibility in the refractive index of involved materials is also highly beneficial. Nanoporous gallium nitride fabricated and structured by ion implantation and electrochemical etching can provide this versatility. In this contribution, we report on nanoporous gallium nitride as a novel material in integrated photonics and discuss devices and technological boundary conditions.",
keywords = "electrochemical etching, gallium nitride, integrated photonics, ion implantation",
author = "Stefanie Kroker and Jyoti Bej and Matthias Hoormann and Frederik L{\"u}{\ss}mann and Florian Meierhofer and Karla Paz and Carsten Ronning and Anastasiia Sorokina and Andreas Waag",
note = "Publisher Copyright: {\textcopyright} 2025 SPIE.; Integrated Optics : Devices, Materials, and Technologies XXIX 2025 ; Conference date: 27-01-2025 Through 30-01-2025",
year = "2025",
month = mar,
day = "19",
doi = "10.1117/12.3041769",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Garcia-Blanco, {Sonia M.} and Pavel Cheben",
booktitle = "Integrated Optics",
address = "United States",
}