Benchmarking dual-polarization silicon nitride photonic integrated circuits for trapped-ion quantum technologies
Abstract
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Details
- Organisation(s)
-
Institute of Quantum Optics
Laboratory of Nano and Quantum Engineering
- External Organisation(s)
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Physikalisch-Technische Bundesanstalt PTB
Technische Universität Braunschweig
AMO GmbH
RWTH Aachen University
- Type
- Article
- Journal
- Journal of the European Optical Society-Rapid Publications
- Volume
- 22
- ISSN
- 1990-2573
- Publication date
- 26.06.2026
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic version(s)
-
https://doi.org/10.1051/jeos/2026049 (Access:
Open
)
