Benchmarking dual-polarization silicon nitride photonic integrated circuits for trapped-ion quantum technologies
Abstract
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Details
- Organisationseinheit(en)
-
Institut für Quantenoptik
Laboratorium für Nano- und Quantenengineering
- Externe Organisation(en)
-
Physikalisch-Technische Bundesanstalt (PTB)
Technische Universität Braunschweig
AMO GmbH
Rheinisch-Westfälische Technische Hochschule Aachen (RWTH)
- Typ
- Artikel
- Journal
- Journal of the European Optical Society-Rapid Publications
- Band
- 22
- ISSN
- 1990-2573
- Publikationsdatum
- 26.06.2026
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Atom- und Molekularphysik sowie Optik
- Elektronische Version(en)
-
https://doi.org/10.1051/jeos/2026049 (Zugang:
Offen
)
