Temperature dependence of the band gap of Si 28:P at very low temperatures measured via time-resolved optical spectroscopy

verfasst von

E. Sauter, N. V. Abrosimov, J. Hübner, M. Oestreich

Abstract

We measure the temperature dependence of the indirect band gap of isotopically purified Si28:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T4 dependence which is about a factor of two less than observed in previous measurements. Such a T4 dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved Si28:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds.

Organisationseinheit(en)

Institut für Festkörperphysik

Externe Organisation(en)

Leibniz-Institut für Kristallzüchtung (IKZ)

Typ

Artikel

Journal

Physical Review Research

Band

5

Anzahl der Seiten

10

ISSN

2643-1564

Publikationsdatum

15.03.2023

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (insg.)

Elektronische Version(en)

https://doi.org/10.1103/PhysRevResearch.5.013182 (Zugang: Offen)