Temperature-dependent photo-elastic coefficient of silicon at 1550 nm

verfasst von
Johannes Dickmann, Jan Meyer, Mika Gaedtke, Stefanie Kroker
Abstract

This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient’s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of dn/ dσ= - 2.463 × 10 - 11 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately 50 % . The photo-elastic coefficient’s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors.

Externe Organisation(en)
Technische Universität Braunschweig
Laboratory for Emerging Nanometrology Braunschweig (LENA)
Physikalisch-Technische Bundesanstalt (PTB)
Typ
Artikel
Journal
Scientific reports
Band
13
ISSN
2045-2322
Publikationsdatum
12.2023
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Allgemein
Elektronische Version(en)
https://doi.org/10.1038/s41598-023-46819-0 (Zugang: Offen)