Impact of oxygen supply during growth on the electrical properties of crystalline Gd₂O₃ thin films on Si(001)

verfasst von

M. Czernohorsky, E. Bugiel, H. J. Osten, A. Fissel, O. Kirfel

Abstract

We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2 O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however, too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2 O3 Si interface structure. Optimized conditions (600 °C and p O2 =5× 10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA cm2 at 1 V.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik
Laboratorium f. Informationstechnologie

Typ

Artikel

Journal

Applied physics letters

Band

88

ISSN

0003-6951

Publikationsdatum

10.04.2006

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.2194227 (Zugang: Geschlossen)