Electrical Properties of Thin ZrSe3Films for Device Applications

verfasst von
Lars Thole, Christopher Belke, Sonja Locmelis, Peter Behrens, Rolf J. Haug
Abstract

Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.

Organisationseinheit(en)
Institut für Festkörperphysik
Institut für Anorganische Chemie
Laboratorium für Nano- und Quantenengineering
QuantumFrontiers
PhoenixD: Simulation, Fabrikation und Anwendung optischer Systeme
Typ
Artikel
Journal
ACS Omega
Band
7
Seiten
39913-39916
Anzahl der Seiten
4
Publikationsdatum
08.11.2022
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Chemie (insg.), Chemische Verfahrenstechnik (insg.)
Elektronische Version(en)
https://doi.org/10.1021/acsomega.2c04198 (Zugang: Offen)