Influence of the electron density on the giant negative magnetoresistance in two-dimensional electron gases

verfasst von

L. Bockhorn, D. Schuh, C. Reichl, W. Wegscheider, R. J. Haug

Abstract

In situ variation of the electron density via a metallic gate can control the disorder potentials in two-dimensional electron gases (2DEGs). This also influences the negative magnetoresistance at low magnetic fields, which is commonly observed in ultrahigh mobility 2DEGs. We investigate the temperature-dependent giant negative magnetoresistance (GNMR) as a function of the electron density for several temperatures and currents. Thereby, we find that the GNMR behavior depends decisively on the electron density. This observation is attributed to a changed disorder potential with electron density. In the case of higher electron densities, a nonlinear current dependency of the GNMR is observed, which could be described within the hydrodynamic regime.

Organisationseinheit(en)

Fakultät für Mathematik und Physik

Externe Organisation(en)

Universität Regensburg
ETH Zürich

Typ

Artikel

Journal

Physical Review B

Band

109

ISSN

2469-9950

Publikationsdatum

13.05.2024

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie

Elektronische Version(en)

https://doi.org/10.1103/PhysRevB.109.205416 (Zugang: Offen)