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роль дефектів у розсіюванні фононів у нецентросиметричному Pb_xTaSe₂

authored by

A. Glamazda, A. Sharafeev, R. Bohle, P. Lemmens, K. Y. Choi, F. C. Chou, R. Sankar

Abstract

The vibrational and electronic properties of the Pb-doped dichalcogenide Pb_xTaSe₂ (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe₂ on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of Pb_xTaSe₂ revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe₂ layers.

External Organisation(s)

B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine
Technische Universität Braunschweig
Sungkyunkwan University
Academia Sinica

Type

Article

Journal

Fizika Nizkikh Temperatur

Volume

47

Pages

994-1002

No. of pages

9

ISSN

0132-6414

Publication date

11.2021

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy(all)