High-accuracy measurements of the quantum anomalous Hall effect for resistance metrology
Abstract
This study explores the quantum anomalous Hall effect (QAHE) in V-doped (BiSb)2Te3, a magnetically-doped topological insulators. We use a precision resistance bridge based on a cryogenic current comparator to measure the QAHE at a zero magnetic field with unprecedented uncertainty (ΔRxy/RK ≤ 12 nΩ/Ω). Measurement results obtained at currents between 40 and 300 nA demonstrate the potential of this technology for quantum metrology, offering a path to a primary electrical resistance standard without external magnetic fields.
Details
- Externe Organisation(en)
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Physikalisch-Technische Bundesanstalt (PTB)
Julius-Maximilians-Universität Würzburg
- Typ
- Aufsatz in Konferenzband
- Publikationsdatum
- 12.07.2024
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Instrumentierung, Elektrotechnik und Elektronik
- Elektronische Version(en)
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https://doi.org/10.1109/cpem61406.2024.10646071 (Zugang:
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